{"id":8241,"date":"2022-07-25T14:18:34","date_gmt":"2022-07-25T05:18:34","guid":{"rendered":"https:\/\/physics.gist.ac.kr\/?post_type=research_news&p=8241"},"modified":"2024-01-16T14:57:22","modified_gmt":"2024-01-16T05:57:22","slug":"%ec%9e%84%ed%98%b8%ec%a4%80-%ea%b9%80%eb%8f%99%ec%9a%b0-%eb%b0%95%ec%82%ac%ea%b3%bc%ec%a0%95%ec%83%9d-%eb%ac%b8%eb%b4%89%ec%a7%84-%ea%b5%90%ec%88%98-%ec%a0%84%eb%a0%a5%eb%b0%98%eb%8f%84%ec%b2%b4","status":"publish","type":"research_news","link":"https:\/\/physics.gist.ac.kr\/en\/news-events\/research_highlights_news\/%ec%9e%84%ed%98%b8%ec%a4%80-%ea%b9%80%eb%8f%99%ec%9a%b0-%eb%b0%95%ec%82%ac%ea%b3%bc%ec%a0%95%ec%83%9d-%eb%ac%b8%eb%b4%89%ec%a7%84-%ea%b5%90%ec%88%98-%ec%a0%84%eb%a0%a5%eb%b0%98%eb%8f%84%ec%b2%b4\/","title":{"rendered":"[\uc784\ud638\uc900, \uae40\ub3d9\uc6b0 \ubc15\uc0ac\uacfc\uc815\uc0dd, \ubb38\ubd09\uc9c4 \uad50\uc218] \uc804\ub825\ubc18\ub3c4\uccb4 \ud575\uc2ec\uc18c\uc790 \ubb3c\uc9c8\uc758 \ubc34\ub4dc\uac2d \uc81c\uc5b4 \ubc29\ubc95 \uac1c\ubc1c – \uacf5\uc815\uacfc\uc815\uc5d0\uc11c\uc758 \ud654\ud559\u00b7\uad6c\uc870\uc801 \ud2b9\uc131 \uc870\uc808\uc744 \ud1b5\ud55c \uc0b0\ud654\ubb3c\uc758 \ubc34\ub4dc\uac2d \uc81c\uc5b4 \uac00\ub2a5\uc131 \uac1c\ucc99 (Applied Surface Science \ub17c\ubb38\uac8c\uc7ac)"},"content":{"rendered":"
\n
\"\"<\/figure>\n<\/div>\n\n\n

\uadf8\ub9bc. \ud6c4\uc5f4\ucc98\ub9ac\ub85c \uc778\ud55c \ubb34\uc815\ud615 \uac08\ub968 \uc0b0\ud654\ubb3c \ubc15\ub9c9\uc758 \uad6c\uc870\uc801, \ud654\ud559\uc801, \uad11\ud559\uc801 \uc131\uc9c8\uc758 \ubcc0\ud654<\/p>\n\n\n\n

\uc8fc\uc0ac \uc804\uc790 \ud604\ubbf8\uacbd\ubc95, X-\uc120 \ud68c\uc808\ubc95, \uc0c1\uc555 \uad11\uc804\uc790 \ubd84\uad11\ubc95, \uac00\uc2dc-\uc790\uc678\uc120 \ubd84\uad11\ubc95 \ub4f1\uc744 \uc774\uc6a9\ud558\uc5ec \uc0b0\uc18c \ud658\uacbd\uc5d0\uc11c \ud6c4\uc5f4\ucc98\ub9ac (post annealing)\ub97c \ud558\ub294 \ub3d9\uc548 \ubc1c\uc0dd\ud558\ub294 \ube44\ud654\ud559\ub7c9\ub860\uc801 (non-stoichiometric) \uac08\ub968 \uc0b0\ud654\ubb3c \ubc15\ub9c9\uc758 \uad6c\uc870\uc801, \ud654\ud559\uc801 \ubcc0\ud654\ub97c \uad00\uce21\ud558\uc600\ub2e4. X-\uc120 \ud68c\uc808\ubc95\uc744 \ud1b5\ud574 \ubb34\uc815\ud615 (amorphous) \uac08\ub968 \uc0b0\ud654\ubb3c \ubc15\ub9c9\uc740 \uc0ac\ud30c\uc774\uc5b4(0001) \uae30\ud310 \uc704\uc5d0 \u03b1\uc640 \u03b2 \uc0c1\uc774 \uc11e\uc778 \ucc44\ub85c \ucf1c\uc313\uae30 (epitaxial) \uacb0\uc815\ud654\ud568\uc744 \uad00\uce21\ud558\uc600\ub2e4. \uc0c1\uc555 \uad11\uc804\uc790 \ubd84\uad11 \uacb0\uacfc\ub294 \ube44\ud654\ud559\ub7c9\ub860\uc801 \uac08\ub968 \uc0b0\ud654\ubb3c \ubc15\ub9c9\uc774 Ga, GaO, Ga2<\/sub>O3<\/sub>\uc758 \uc0c1\ud0dc\ub85c \uad6c\uc131\ub418\uc5b4 \uc788\uc73c\uba70, \ud6c4\uc5f4\ucc98\ub9ac\ub85c \uc778\ud574 Ga2<\/sub>O \uc0c1\uc774 Ga2<\/sub>O3<\/sub> \uc0c1\uc73c\ub85c \uc0b0\ud654\ub428\uc744 \ubcf4\uc5ec\uc8fc\uc5c8\ub2e4. \ud6c4\uc5f4\ucc98\ub9ac\ub3d9\uc548 \ubc34\ub4dc\uac2d\uc740 \ucd08\uae30 \ubb34\uc815\ud615 \uc2dc\ub8cc\uc758 4.16eV\uc5d0\uc11c 4.81eV\ub85c \uc810\uc9c4\uc801\uc778 \uc99d\uac00\ub97c \ud558\uc600\ub2e4. \uc774\ub7ec\ud55c \uacb0\uacfc\ub294 \ub77c\ub514\uc624\ud30c \ubd84\ub9d0 \uc2a4\ud37c\ud130\ub9c1\ubc95 (Radio-frequency powder sputtering)\uc5d0 \uc758\ud574 \uc99d\ucc29\ub41c \ube44\ud654\ud559\ub7c9\ub860\uc801 \uac08\ub968 \uc0b0\ud654\ubb3c \ubc15\ub9c9\uc758 \ud654\ud559 \uc870\uc131\uacfc \ubc34\ub4dc\uac2d \uc0ac\uc774\uc5d0 \uc5f0\uad00\uc131\uc774 \uc788\uc74c\uc744 \uc2dc\uc0ac\ud55c\ub2e4.<\/p>\n\n\n\n

The evolution of the structural and chemical properties of non-stoichiometric amorphous Ga2<\/sub>O3-x<\/sub> thin films during post-annealing in an atmospheric environment was investigated using scanning electron microscopy, X-ray diffraction, ambient pressure X-ray photoelectron spectroscopy (AP-XPS), and ultraviolet\u2013visible light spectroscopy. The amorphous thin films were crystallized into a mixture of \u03b1 and \u03b2 phases that were epitaxial to the sapphire (0001) substrate. The AP-XPS results indicate that the non-stoichiometric state of the Ga2<\/sub>O3-x<\/sub> thin films is composed of metallic Ga, Ga2<\/sub>O, and Ga2<\/sub>O3<\/sub>. Ga and Ga2<\/sub>O are oxidized into Ga2O3, achieving a stoichiometric state during the post-annealing process. This gradually increases the optical bandgap from 4.16 eV for the as-grown sample to 4.81 eV for the sample annealed at 600 \u2103. Our results support the relationship between the chemical composition and bandgap of non-stoichiometric Ga2<\/sub>O3-x<\/sub> films deposited by radio-frequency powder sputtering.<\/p>\n\n\n\n

Authors<\/strong>: Hojoon Lim (FA, GIST), Dongwoo Kim (FA, GIST), Su Yeon Cha (Chosun Univ.), Bongjin Simon Mun (CA, GIST), Do Young Noh (GIST), Hyon Chol Kang (CA, Chosun Univ.)<\/p>\n\n\n\n

Publication Date<\/strong>: 9 February 2022<\/p>\n\n\n\n

Journal Link(DOI)<\/strong>: https:\/\/doi.org\/10.1016\/j.apsusc.2022.152771<\/a><\/p>\n\n\n\n

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