{"id":9598,"date":"2024-02-25T14:38:53","date_gmt":"2024-02-25T05:38:53","guid":{"rendered":"https:\/\/physics.gist.ac.kr\/?post_type=research_news&#038;p=9598"},"modified":"2024-02-25T15:04:49","modified_gmt":"2024-02-25T06:04:49","slug":"%ec%b5%9c%ec%9d%b8%ed%98%81-%eb%b0%95%ec%82%ac-%ec%9d%b4%ec%a2%85%ec%84%9d-%ea%b5%90%ec%88%98-%ea%b0%95%ec%9c%a0%ec%a0%84%ec%b2%b4-hzo-%eb%b0%95%eb%a7%89%ec%9d%98-%eb%8c%80%eb%a9%b4%ec%a0%81","status":"publish","type":"research_news","link":"https:\/\/physics.gist.ac.kr\/en\/news-events\/research_highlights_news\/%ec%b5%9c%ec%9d%b8%ed%98%81-%eb%b0%95%ec%82%ac-%ec%9d%b4%ec%a2%85%ec%84%9d-%ea%b5%90%ec%88%98-%ea%b0%95%ec%9c%a0%ec%a0%84%ec%b2%b4-hzo-%eb%b0%95%eb%a7%89%ec%9d%98-%eb%8c%80%eb%a9%b4%ec%a0%81\/","title":{"rendered":"[\ucd5c\uc778\ud601 \ubc15\uc0ac, \uc774\uc885\uc11d \uad50\uc218] \uac15\uc720\uc804\uccb4 HZO \ubc15\ub9c9\uc758 \ub300\uba74\uc801 \uc131\uc7a5 \ubc0f \ud2b9\uc131 \uaddc\uba85 (Advanced Functional Materials)"},"content":{"rendered":"\n<figure class=\"wp-block-image size-full\"><img fetchpriority=\"high\" decoding=\"async\" width=\"1053\" height=\"483\" src=\"https:\/\/physics.gist.ac.kr\/wp-content\/uploads\/2024\/02\/\uadf8\ub9bc.jpg\" alt=\"\" class=\"wp-image-9599\" title=\"\"><\/figure>\n\n\n\n<p class=\"has-text-align-center\"><strong>Figure 1. Epitaxial growth of HZO thin film on YSZ substrate using ALD process<\/strong><\/p>\n\n\n\n<p><\/p>\n\n\n\n<p><\/p>\n\n\n\n<p>HfO2\uc5d0\uc11c\uc758 \uac15\uc720\uc804\uc131 \ubc1c\uacac \uc774\ud6c4 \ubc15\ub9c9\uc5d0\uc11c\uc758 \uc5d0\ud53c\ud0dd\uc15c \uc548\uc815\ud654 \ubc0f \uac15\uc720\uc804\uc131 \ubc1c\ud604 \uae30\uc791\uc5d0 \ub300\ud55c \uc124\uba85\uc740 \uacfc\ud559\uc801 \uad00\uc2ec\ubfd0\ub9cc \uc544\ub2c8\ub77c \uc0b0\uc5c5\uc801 \uc751\uc6a9 \uce21\uba74\uc5d0\uc11c\ub3c4 \uc5b4\ub824\uc6b4 \uacfc\uc81c\uc600\ub2e4. \ubcf8 \uc5f0\uad6c\uc5d0\uc11c\ub294 \uc6d0\uc790\uce35 \uc99d\ucc29\ubc95\uc744 \uc774\uc6a9\ud558\uc5ec \uc9c0\ub974\ucf54\ub2c8\ub098 \uae30\ud310\uc704\uc5d0 Hf0.5Zr0.5O2(HZO) \ubc15\ub9c9\uc758 \uc5d0\ud53c\ud0dd\uc15c \uc131\uc7a5\uc5d0 \uc131\uacf5\ud558\uc600\uace0, X\uc120 \ud68c\uc808, 2\ucc28 \uace0\uc870\ud30c \ubc1c\uc0dd \ubc0f \ud22c\uacfc \uc804\uc790 \ud604\ubbf8\uacbd\uc744 \uc0ac\uc6a9\ud558\uc5ec \ud655\uc778\ub418\ub294 \uac15\uc720\uc804\uc131 \ubc0f \uc0ac\ubc29\uc815\uacc4 \uacb0\uc815 \ud2b9\uc131\uc744 \ud655\uc778\ud558\uc600\ub2e4. \ub610\ud55c, \uc9c0\ub974\ucf54\ub2c8\uc544\ub97c \uc644\ucda9\uce35\uc73c\ub85c \uc0ac\uc6a9\ud558\uc5ec Si \uae30\ud310\uc5d0 \uc5d0\ud53c\ud0dd\uc15c HZO \ubc15\ub9c9\uc744 \uc131\uc7a5\ud558\uc5ec, \uac15\uc720\uc804\uc131 HZO \ubc15\ub9c9\uc774 CMOS \uae30\uc220\uacfc\uc758 \ud638\ud658\uc131\uc774 \uac00\ub2a5\ud568\uc744 \ubcf4\uc5ec\uc904 \uc218 \uc788\uc5c8\ub2e4. \uc774\ub7ec\ud55c \uac15\uc720\uc804\uc131 HfO2 \uae30\ubc18 \ubb3c\uc9c8\uc758 \ub300\uaddc\ubaa8 \ud569\uc131 \uc2dc\uc2a4\ud15c \uad6c\ud604\uc774 \uac00\ub2a5\ud568\uc744 \uc81c\uc2dc\ud55c \uc774\ub7ec\ud55c \uacb0\uacfc\ub294 \ud5a5\ud6c4 \ub2e4\uc591\ud55c \uc804\uc790 \uae30\uc220 \uad6c\ud604\uc5d0 \uc2e4\uc81c \uc801\uc6a9\ub420 \uc218 \uc788\uc744 \uac83\uc73c\ub85c \uae30\ub300\ub41c\ub2e4. \uc774 \uacb0\uacfc\ub294 \uc751\uc6a9 \uc7ac\ub8cc \ubd84\uc57c\uc758 \uad8c\uc704\uc9c0\uc778 Advanced Functional Materials\uc9c0\uc5d0 (IF 19.41) 2024\ub144 2\uc6d4\uc5d0 \ucd9c\ud310\ub418\uc5c8\ub2e4. \ubcf8 \uc5f0\uad6c\ub294 \uc11c\uc6b8\ub300 \ucc44\uc2b9\ucca0 \uad50\uc218 \uc5f0\uad6c\ud300\uacfc \ud3ec\uc2a4\ud14d \ucd5c\uc2dc\uc601 \uad50\uc218 \uc5f0\uad6c\ud300\uacfc\uc758 \uacf5\ub3d9\uc5f0\uad6c\ub85c \uc9c4\ud589\ub418\uc5c8\ub2e4.<\/p>\n\n\n\n<p>Since the discovery of unconventional ferroelectricity in HfO2 for next-generation memory devices, its epitaxial stabilization and elucidation of intrinsic ferroelectricity have been challenging in terms of industrial applications as well as scientific interests. This study establishes the efficacy of atomic layer deposition (ALD) as a viable method for large-scale production in contemporary industries, showcasing its capability to achieve epitaxial growth of ferroelectric Hf0.5Zr0.5O2 (HZO) thin film on Yttria-stabilized zirconia (YSZ) substrates. Its crystallographic orientation can be controlled by the surface orientation of the YSZ substrate and formed with ferroelectric orthorhombic phases that are confirmed by using X-ray diffraction, second harmonic generation, and transmission electron microscope. Additionally, we also present ferroelectric properties in epitaxial HZO thin films deposited via ALD on YSZ buffered Si substrates, showing their compatibility with CMOS technology. These HZO thin films exhibit well-defined ferroelectric switching currents, underscoring their promising potential for advanced device applications. Our finding suggests the fPeasibility of a large-scale synthesis system of ferroelectric HfO2-based materials, thereby opening avenues for low-temperature epitaxial nanoelectronics.<\/p>\n\n\n\n<p><\/p>\n\n\n\n<p><\/p>\n\n\n\n<p><strong>Authors<\/strong>: Jung Woo Cho, Myeong Seop Song, In Hyeok Choi (GIST, \uacf5\ub3d9\uc800\uc790), Kyoung-June Go, Jaewoo Han, Tae Yoon Lee, Chihwan An, Hyung Jin Choi, Changhee Sohn, Min Hyuk Park, Seung Hyup Baek, Jong Seok Lee (GIST, \uacf5\ub3d9\uad50\uc2e0\uc800\uc790), Si-Young Choi (POSTECH, \uacf5\ub3d9\uad50\uc2e0\uc800\uc790), and Seung Chul Chae (\uc11c\uc6b8\ub300, \uacf5\ub3d9\uad50\uc2e0\uc800\uc790)<\/p>\n\n\n\n<p><strong>Publication Date: February 2024<\/strong><\/p>\n\n\n\n<p>Journal link: <a href=\"https:\/\/doi.org\/10.1002\/adfm.202314396\" target=\"_blank\" rel=\"noreferrer noopener\">https:\/\/doi.org\/10.1002\/adfm.202314396<\/a><\/p>\n","protected":false},"featured_media":9600,"template":"","news":[27],"class_list":["post-9598","research_news","type-research_news","status-publish","has-post-thumbnail","hentry","news-research"],"acf":[],"_links":{"self":[{"href":"https:\/\/physics.gist.ac.kr\/en\/wp-json\/wp\/v2\/research_news\/9598","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/physics.gist.ac.kr\/en\/wp-json\/wp\/v2\/research_news"}],"about":[{"href":"https:\/\/physics.gist.ac.kr\/en\/wp-json\/wp\/v2\/types\/research_news"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/physics.gist.ac.kr\/en\/wp-json\/wp\/v2\/media\/9600"}],"wp:attachment":[{"href":"https:\/\/physics.gist.ac.kr\/en\/wp-json\/wp\/v2\/media?parent=9598"}],"wp:term":[{"taxonomy":"news","embeddable":true,"href":"https:\/\/physics.gist.ac.kr\/en\/wp-json\/wp\/v2\/news?post=9598"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}